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Properties of B and P doped Ge nanowires
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10.1063/1.2752107
/content/aip/journal/apl/90/26/10.1063/1.2752107
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/26/10.1063/1.2752107
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Relaxed unit cell of NW: (a) the [110] wire consists of 16 Ge and 12 H atoms and (b) the wire consists of 42 Ge and 20 H atoms.

Image of FIG. 2.
FIG. 2.

(Color online) Formation energy of the wire as a function of the dopant position [see Fig. 1(a)] and the dopant separation along the wire axes.

Image of FIG. 3.
FIG. 3.

(Color online) Formation energy of the smallest wire for relaxed and unrelaxed structures. The effect of the relaxation lowers the formation energy and this effect is larger for a P doped wire than it is for a B doped one. The effect is also larger for position 3 (the edge location). The inset shows the relaxed structured for a wire with a B dopant on position 2. The transparent image shows the unrelaxed structure.

Image of FIG. 4.
FIG. 4.

(Color online) Formation energy for the wire in the presence and absence of a dangling bond as a function of the dopant position [see Fig. 1(b)].

Image of FIG. 5.
FIG. 5.

(Color online) Formation energy of the wire, in the presence of a DB defect, given as a function of the dopant position for two different dopant separations along the wire axis ( and ). The inset shows the relaxed unit cell for a B dopant placed at position 2.

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/content/aip/journal/apl/90/26/10.1063/1.2752107
2007-06-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of B and P doped Ge nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/26/10.1063/1.2752107
10.1063/1.2752107
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