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Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks
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10.1063/1.2752769
/content/aip/journal/apl/90/26/10.1063/1.2752769
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/26/10.1063/1.2752769
/content/aip/journal/apl/90/26/10.1063/1.2752769
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/content/aip/journal/apl/90/26/10.1063/1.2752769
2007-06-29
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/26/10.1063/1.2752769
10.1063/1.2752769
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