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Undoped homojunction chalcogen thin-film transistors on glass
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Energy band diagram for a homojunction using -GST and -GST (a) before and (b) after contact. In the figure and represent the carrier concentration of the positively cooled -GST and that of the -GST, respectively. , , , and represent the band gap of the -GST, band gap of the -GST, of the -GST, and of the -GST, respectively. In the diagram, it is assumed that the energy band gap of the -GST is and that of the -GST is and any effects due to interface states have been ignored.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Schematic of the direct formation of the current rectification and (b) experimental results of the GST rectifier on glass. (b) shows the characteristics of the rectifier with a junction between the region [denoted as light gray in (a)] and the positively cooled region of GST [denoted as dark gray in (a)].

Image of FIG. 3.
FIG. 3.

(Color online) Fabrication process of the UHJ-c-TFT and optical image of the experimental results. In step (h), the optical image is the fabricated device and S, D, and G represent source, drain, and gate electrodes, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) Electrical characteristics of the UHJ-c-TFT: (a) output characteristics and (b) transfer characteristics.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Undoped homojunction chalcogen thin-film transistors on glass