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(Color online) Schematic cross section of the -IGZO TFT on glass substrate with bottom gate and top contact structures.
(Color online) Resistivity of -IGZO thin films as a function of an Ar plasma exposure time. The net electron carrier concentration and the Hall mobility of -IGZO thin films were shown in the inset.
(Color online) Representative transfer characteristics of -IGZO TFTs (a) without and (b) with Ar plasma treatment on the contact regions before depositing the source/drain electrode, respectively. (c) The output characteristics of -IGZO TFT with Ar plasma treatment. (d) Width-normalized device resistance as a function of at and for both -IGZO TFTs.
Comparisons of the extracted parameters for -channel -IGZO TFTs without and with an Ar plasma treatment on glass substrates.
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