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Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
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10.1063/1.2753107
/content/aip/journal/apl/90/26/10.1063/1.2753107
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/26/10.1063/1.2753107
/content/aip/journal/apl/90/26/10.1063/1.2753107
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/content/aip/journal/apl/90/26/10.1063/1.2753107
2007-06-26
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/26/10.1063/1.2753107
10.1063/1.2753107
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