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Work function of on and and its implication for Ni fully silicided gate applications
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10.1063/1.2430687
/content/aip/journal/apl/90/3/10.1063/1.2430687
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2430687
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns ( radiation) of silicide films formed by the RTP reaction of 84 or Ni with poly-Si (on ). Films contain NiSi and at RTP of for , and predominantly (with as secondary phase) for anneals at , or for longer-lower temperature anneals .

Image of FIG. 2.
FIG. 2.

vs EOT of undoped FUSI gates with dielectric stacks, for (a) NiSi, , , and , , and fixed and varying thicknesses; and (b) , and , and varying and fixed thicknesses.

Image of FIG. 3.
FIG. 3.

vs EOT for undoped NiSi, , , and FUSI gates and for P doped NiSi and gates (showing reduction in with P) on .

Image of FIG. 4.
FIG. 4.

WF of NiSi, , , and FUSI gates on and dielectrics, showing the effect of P and B dopants on and of varying Hf content [, 40, and ] for on . Hf content for the NiSi, , and gates on was . Similar behavior is observed for NiSi and gates, in contrast to the Ni-richer silicides.

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/content/aip/journal/apl/90/3/10.1063/1.2430687
2007-01-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2430687
10.1063/1.2430687
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