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X-ray diffraction patterns ( radiation) of silicide films formed by the RTP reaction of 84 or Ni with poly-Si (on ). Films contain NiSi and at RTP of for , and predominantly (with as secondary phase) for anneals at , or for longer-lower temperature anneals .
vs EOT of undoped FUSI gates with dielectric stacks, for (a) NiSi, , , and , , and fixed and varying thicknesses; and (b) , and , and varying and fixed thicknesses.
vs EOT for undoped NiSi, , , and FUSI gates and for P doped NiSi and gates (showing reduction in with P) on .
WF of NiSi, , , and FUSI gates on and dielectrics, showing the effect of P and B dopants on and of varying Hf content [, 40, and ] for on . Hf content for the NiSi, , and gates on was . Similar behavior is observed for NiSi and gates, in contrast to the Ni-richer silicides.
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