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Gallium nitride based microcavity light emitting diodes with effective cavity thickness
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10.1063/1.2430913
/content/aip/journal/apl/90/3/10.1063/1.2430913
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2430913
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

[(a) and (b)] Schematics of epitaxial growth material (a) and processed device (b).

Image of FIG. 2.
FIG. 2.

(Color online) [(a) and (b)] Angle-resolved electroluminescence spectra for the two thin LEDs. (a) is the detuned device with a cavity length of . (b) is the resonant device with a cavity length of .

Image of FIG. 3.
FIG. 3.

(Color online) [(a) and (b)] Normalized angle-resolved electroluminescence spectra for the two thin LEDs. (a) is the detuned cavity device. (b) is the resonant cavity device. Red dashed line; maximum quantum well emission. Green full line: fit of the dispersion of a Fabry-Pérot mode.

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/content/aip/journal/apl/90/3/10.1063/1.2430913
2007-01-18
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2430913
10.1063/1.2430913
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