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Gallium nitride based microcavity light emitting diodes with effective cavity thickness
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11.Note that this procedure does not restore the exact quantum well line shape—notably, the signal intensity is overestimated when there is no FP mode in the escape cone, which explains the presence of artificial “lobes” above the FP modes in Fig. 3. However, the proper dispersion of the FP modes is recovered, which enables an accurate analysis of the LEDs’ properties.
12.
12.Spectra were collected in TE polarization, and the effect of GaN birefringence was neglected: it should be weak for these short optical travels, and for light propagation close to the axis of GaN.
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/content/aip/journal/apl/90/3/10.1063/1.2430913
2007-01-18
2014-10-24

Abstract

Gallium nitride based microcavitylight emitting diodes less than thick emitting at a peak wavelength of have been fabricated. The epitaxial structure was grown by metal organic chemical vapor deposition, and the device was fabricated using a laser lift-off process. Cavity thinning was carried out using inductively coupled plasmaetching until a cavity length of roughly (, corresponding to a cavity order of 4 for in GaN) was achieved. Devices are presented that show perfectly detuned angular emission and perfectly resonant emission between the cavity length and emission wavelength.

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Scitation: Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2430913
10.1063/1.2430913
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