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Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

FE-SEM images of grown ZnO nanowall networks. Tilting-view (30°) FE-SEM images of the ZnO nanowall networks of (a) low-magnification image and (b) medium-magnification image. [(c) and (d)] Low- and high-magnification plan-view FE-SEM images of the nanowall networks, respectively. (e) Cross-sectional FE-SEM image of the ZnO nanowall sample. The areas marked as “a,” “b,” “c,” and “d” are ZnO nanowalls, ZnO thin film, GaN epilayer, and , respectively. (f) EDS result of the area marked as b.

Image of FIG. 2.
FIG. 2.

(a) Powder x-ray diffraction profiles measured in the surface normal direction. The inset shows near ZnO (0002) and GaN (0002) Bragg’s reflection positions with a linear scale. (b) Phi scans along the azimuth circles of ZnO , Au , and GaN nonspecular reflections.

Image of FIG. 3.
FIG. 3.

(a) BF TEM image of the single nanowall. (b) HREM image taken from the single nanowall. The inset is the FFT pattern of the HREM image.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Schematic representation of electrode geometry with interdigitated patterns deposited on the ZnO nanowall-network surface for characterizing hydrogen-sensing properties. (b) Time-dependent resistance change between two adjacent electrodes on the ZnO nanowall networks exposed to the atmosphere of hydrogen-dry air mixture setting to at .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates