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Cyclotron localization in a sub- silicon quantum dot single electron transistor
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10.1063/1.2431565
/content/aip/journal/apl/90/3/10.1063/1.2431565
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2431565
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Oscillatory current modulation in gate voltage at (black curve) and (red curve) measured at for the device shown in the top-right inset. The device contains a big island connected to leads via small dots present in the nanoconstrictions. The top-left inset presents curves at ramping clearly marking the Coulomb blockade diamond; a closer look reveals fine wiggles arising from Coulomb oscillation in the big island.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Dynamics of five current peaks in magnetic field at a bias voltage of . The curves shift with field from at the bottom to at the top. The current peaks at zero magnetic field are clearly suppressed as seen from peak P3. The inset presents enlarged view of P5 describing the evolution of current peak position with the applied fields of (black curve), (green curve), and (red curve). Note also that the small wiggles show no shift in the field. The peak position shift in (b) and height modulation in (c) as a function of magnetic field for the five peaks are extracted from the raw data shown in (a) for further analysis. Peaks 2 and 3 show clear splitting in the presence of field, and the peaks shift in opposite directions. The peak height curves in (c) are placed in accordance with the respective positions in (a), and the magnitude of modulation is presented in the horizontal axis with a scale bar.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison between (a) the theoretical eigenenergy spectrum in the presence of external field and (b) the experimental current peak position data. The zero field regions have multifold degeneracy and the beginning of our comparison with the theoretical curves from and is justified.

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/content/aip/journal/apl/90/3/10.1063/1.2431565
2007-01-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cyclotron localization in a sub-10-nm silicon quantum dot single electron transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2431565
10.1063/1.2431565
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