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Epitaxial growth of films on substrates by a hydrothermal-galvanic couple method
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10.1063/1.2431572
/content/aip/journal/apl/90/3/10.1063/1.2431572
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2431572
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Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction spectra of as-deposited specimens with (a) (111) and (c) (200) preferred orientations and those after hydrothermal-galvanic couple synthesis at for on (b) (111)- and (d) (200)-oriented .

Image of FIG. 2.
FIG. 2.

FE-SEM micrographs of the surface morphology of resultant over (a) (111)- and (b) (200)-oriented , as well as cross-sectional view for the oxide over (c) (111)- and (d) (200)-oriented after hydrothermal-galvanic couple synthesis at for .

Image of FIG. 3.
FIG. 3.

FE-SEM micrographs of resultant over (111) after synthesis conducted at for by (a) a sole hydrothermal method and (b) a hydrothermal-galvanic couple technique that clearly could enhance the growth rate.

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/content/aip/journal/apl/90/3/10.1063/1.2431572
2007-01-18
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of BaTiO3 films on TiN∕Si substrates by a hydrothermal-galvanic couple method
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2431572
10.1063/1.2431572
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