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High-resolution electron micrograph of the heterostructure. The ⟨0001⟩ growth direction is from bottom to top. The AlN layer has a bright contrast.
(a) Phase and (b) amplitude hologram images showing the edge of the sample at the top. The ⟨0001⟩ growth direction is indicated.
Phase (lower curve) and corresponding thickness (upper curve) profiles derived from the reconstructed phase and amplitude images, assuming an inelastic mean free path of . All the profiles are along the growth direction. The position of the interface is at the origin.
Potential energy profile across the heterostructure, derived from the electron hologram data.
(a) Functional fit of the potential profile over the 2DEG region and the AlGaN barrier layer. The AlN layer is not being considered. (b) Charge density distribution over the 2DEG region and the AlGaN barrier layer, obtained using Poison’s equation by twice differentiating the functional fit of the potential profile.
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