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Mapping the electrostatic potential across heterostructures using electron holography
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View: Figures


Image of FIG. 1.
FIG. 1.

High-resolution electron micrograph of the heterostructure. The ⟨0001⟩ growth direction is from bottom to top. The AlN layer has a bright contrast.

Image of FIG. 2.
FIG. 2.

(a) Phase and (b) amplitude hologram images showing the edge of the sample at the top. The ⟨0001⟩ growth direction is indicated.

Image of FIG. 3.
FIG. 3.

Phase (lower curve) and corresponding thickness (upper curve) profiles derived from the reconstructed phase and amplitude images, assuming an inelastic mean free path of . All the profiles are along the growth direction. The position of the interface is at the origin.

Image of FIG. 4.
FIG. 4.

Potential energy profile across the heterostructure, derived from the electron hologram data.

Image of FIG. 5.
FIG. 5.

(a) Functional fit of the potential profile over the 2DEG region and the AlGaN barrier layer. The AlN layer is not being considered. (b) Charge density distribution over the 2DEG region and the AlGaN barrier layer, obtained using Poison’s equation by twice differentiating the functional fit of the potential profile.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mapping the electrostatic potential across AlGaN∕AlN∕GaN heterostructures using electron holography