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The effect of silicon doping in the selected barrier on the electroluminescence of multiquantum well light emitting diode
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10.1063/1.2431717
/content/aip/journal/apl/90/3/10.1063/1.2431717
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2431717
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

MQW structures of the five types of DW-LEDs (a) and the ELs of the DW-LEDs at typical operation current, (b).

Image of FIG. 2.
FIG. 2.

Electroluminescence spectra of LED4 at injection current levels . The arrow indicates the shoulder from the quantum wells, W1–4.

Image of FIG. 3.
FIG. 3.

Simulation results of the energy band diagram (a) and the hole concentration at W3, W4, and W5 (b) of 5QWs with a silicon doped barrier, B4.

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/content/aip/journal/apl/90/3/10.1063/1.2431717
2007-01-16
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of silicon doping in the selected barrier on the electroluminescence of InGaN∕GaN multiquantum well light emitting diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2431717
10.1063/1.2431717
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