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Improvement switching characteristics of toggle magnetic random access memory with dual polarity write pulse scheme
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10.1063/1.2431755
/content/aip/journal/apl/90/3/10.1063/1.2431755
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2431755
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Simulation results of toggle probability with (a) conventional toggle wave form and (b) DNP wave form.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Two kinds of failure mode by conventional toggle wave form at strong built-in bias fields and (b) the direction of applied magnetic fields affect on MTJ in toggle wave form at different time intervals. (c) The direction of applied magnetic fields affect on MTJ in DNP wave form at different time intervals.

Image of FIG. 3.
FIG. 3.

(Color online) Thermal effect on toggle probability.

Image of FIG. 4.
FIG. 4.

Experimental results of toggle probability of (a) in CoFe(1.0 nm)CoFeB(2.0 nm)/Ru/CoFe(4.3 and 5.0 nm) pinned layer structure and (b) in CoFe(1.0 nm)CoFeB(2.0 nm)/Ru/CoFe(4.3 and 5.0 nm) pinned layer structure.

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/content/aip/journal/apl/90/3/10.1063/1.2431755
2007-01-17
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement switching characteristics of toggle magnetic random access memory with dual polarity write pulse scheme
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2431755
10.1063/1.2431755
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