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filled-state STM images of thick (a) and (b) with corresponding topographic cross sections and .
HR-XRD rocking curves around the (004) reflection for (a) and (b) : the black line shows the measured rocking curve, while the gray line shows the computer simulation. PL emission spectra for (c) and (d) .
Plot of XRD determined N content against PL emission wavelength and energy (represented by triangles). The diamonds represent the ten-band BAC theory predicted emission for the samples. Error bars have been omitted for clarity but the error in the XRD measured N content is , and emission linewidths are represented in Figs. 2(c) and 2(d). The lower right inset illustrates fine control over N content by variation of /total growth rate. The upper left inset shows the ten-band BAC theory derived variation of emission wavelength with N content, for thick QWs separated by thick GaAs spacer layers at . All data sets have linear fits with .
Typical SIMS depth profiles of two layers: (a) as grown and (b) in situ postgrowth annealed. Lines signifying 0.5% and 5% N content are included.
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