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Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model
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10.1063/1.2431792
/content/aip/journal/apl/90/3/10.1063/1.2431792
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2431792
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Relations between resistance in LRS and reset time for (a) junction and (b) NiO junction. Insets show voltage wave forms of first reset (solid line) and second reset (dotted line), respectively.

Image of FIG. 2.
FIG. 2.

(Color online) Cross sectional view of analysis model in a TMO junction.

Image of FIG. 3.
FIG. 3.

Temperature of filament depending on (a) radius of filament with four filament resistivity values: , 30, 60, and , which represent either metallic or semiconductive filamentary paths, and (b) current heating time for radius. Values of and are fixed at and , respectively.

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/content/aip/journal/apl/90/3/10.1063/1.2431792
2007-01-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2431792
10.1063/1.2431792
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