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(Color online) Schematic process flows of SGOI condensation with and without intermittent oxide etch: (a) As deposited, [(b) and (c)] flow with and without oxide etch, (d) overoxidized due to uncontrolled oxidation, and (e) high Ge content SGOI layer formed from controlled oxidation.
(Color online) TEM images of layers (a) overoxidized at , (b) overoxidized at showing SiO and SiGeO layers, and (c) EDS spectrum of SiGeO layer.
(Color online) (a) Schematic of additional crystalline silicon germanium oxide (SiGeO) with SGOI. (b) TEM image of SGOI layer with additional layer at SiGe and top oxide. Inset shows the crystalline nature of the layer. (c) Schematic of double layers observed in SGOI layer. (d) TEM images showing the SiGeO oxide on both sides of the SiGe layer.
(Color online) TEM images of (a) layer and (b) layer. (c) Raman data for the SGOI layers with 60% and 90% Ge.
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