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SiGeO layer formation mechanism at the SiGe/oxide interfaces during Ge condensation
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10.1063/1.2432252
/content/aip/journal/apl/90/3/10.1063/1.2432252
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2432252
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic process flows of SGOI condensation with and without intermittent oxide etch: (a) As deposited, [(b) and (c)] flow with and without oxide etch, (d) overoxidized due to uncontrolled oxidation, and (e) high Ge content SGOI layer formed from controlled oxidation.

Image of FIG. 2.
FIG. 2.

(Color online) TEM images of layers (a) overoxidized at , (b) overoxidized at showing SiO and SiGeO layers, and (c) EDS spectrum of SiGeO layer.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Schematic of additional crystalline silicon germanium oxide (SiGeO) with SGOI. (b) TEM image of SGOI layer with additional layer at SiGe and top oxide. Inset shows the crystalline nature of the layer. (c) Schematic of double layers observed in SGOI layer. (d) TEM images showing the SiGeO oxide on both sides of the SiGe layer.

Image of FIG. 4.
FIG. 4.

(Color online) TEM images of (a) layer and (b) layer. (c) Raman data for the SGOI layers with 60% and 90% Ge.

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/content/aip/journal/apl/90/3/10.1063/1.2432252
2007-01-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SiGeO layer formation mechanism at the SiGe/oxide interfaces during Ge condensation
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2432252
10.1063/1.2432252
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