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Complete suppression of large InAs island formation on GaAs by metal organic chemical vapor deposition with periodic interruption
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10.1063/1.2432285
/content/aip/journal/apl/90/3/10.1063/1.2432285
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2432285
/content/aip/journal/apl/90/3/10.1063/1.2432285
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/content/aip/journal/apl/90/3/10.1063/1.2432285
2007-01-16
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Complete suppression of large InAs island formation on GaAs by metal organic chemical vapor deposition with periodic AsH3 interruption
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2432285
10.1063/1.2432285
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