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Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow- dielectric systems
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10.1063/1.2432948
/content/aip/journal/apl/90/3/10.1063/1.2432948
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2432948
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Figures

Image of FIG. 1.
FIG. 1.

(a) TEM cross sectional image of interfaces (Ref. 10). The ULK used is porous SiLK™ (Ref. 11), a polystryrene-based porous polymer with average pore size of and bulk value of 2.2. Ta atoms were sputtered onto the pore-sealing layers to form a thick Ta barrier film, followed by the sputtering deposition of thick Cu conductor film. (b) SIMS profiles for interfaces showing the penetration of Ta and Cu atoms into the ULK polymer.

Image of FIG. 2.
FIG. 2.

(Color online) Structures of Ta atoms above three amorphous surfaces of H molar percentages of (a) 15%, (b) 25%, and (c) 35%. Depositions were carried out in two successive batches of 16 Ta atoms each via a CPMD simulation at .

Image of FIG. 3.
FIG. 3.

RDF of Ta structures on SiC:H substrates with different H concentrations. The curve for Ta structure on pure SiC was reported previously.

Image of FIG. 4.
FIG. 4.

(Color online) States of Cu diffusion into Ta after (a) , (b) , and (c) . The bottom substrate is amorphous with 35% H content.

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/content/aip/journal/apl/90/3/10.1063/1.2432948
2007-01-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2432948
10.1063/1.2432948
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