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Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer
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10.1063/1.2433025
/content/aip/journal/apl/90/3/10.1063/1.2433025
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2433025
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Illustration of the sample structure.

Image of FIG. 2.
FIG. 2.

Raman spectra of SiGe grown on Si with buried porous layers with different porosities (solid lines) and substrates without growth of SiGe (dotted lines).

Image of FIG. 3.
FIG. 3.

Comparison of in-plane strain in SiGe calculated with two different methods.

Image of FIG. 4.
FIG. 4.

Correlation between the Raman peak positions of Si–Si optical modes in SiGe and Si.

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/content/aip/journal/apl/90/3/10.1063/1.2433025
2007-01-19
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/3/10.1063/1.2433025
10.1063/1.2433025
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