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Stress induced leakage current mechanism in thin Hf-silicate layers
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10.1063/1.2420774
/content/aip/journal/apl/90/4/10.1063/1.2420774
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2420774
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Stress induced leakage currents created under substrate injection at two temperatures: (a) and (b) . An asymmetry is clearly seen for the two gate polarities.

Image of FIG. 2.
FIG. 2.

Relative increase of SILC as a function of injected charge measured at two temperatures and for samples with different thicknesses. The shaded area represents the weakly temperature dependent process. For strongly temperature dependent process takes place.

Image of FIG. 3.
FIG. 3.

Recovery of SILC after detrapping at (a) and (b) .

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/content/aip/journal/apl/90/4/10.1063/1.2420774
2007-01-24
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress induced leakage current mechanism in thin Hf-silicate layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2420774
10.1063/1.2420774
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