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XRD pattern of a typical film deposited on platinized Si substrate.
Cross-sectional TEM studies showing the structure of the BST films on under transmission electron microscope (TEM): (a) low magnitude bright field image; (b) and (c) show high-resolution TEM image for the interface structures of and BST/Pt(111), respectively. It is worth noting that an ultrathin layer was formed between Pt and Si. No chemical reaction or interdiffusion between different layers was observed.
Dielectric constant and dielectric loss of the Pt/BST/Pt capacitor as a function of the electric field.
Dielectric constant and dielectric loss of the Pt/BST/Pt capacitor as a function of frequency. Inset is a typical hysteresis loop of Pt/BST/Pt capacitor.
Leakage current density of (111) textured BST film as a function of the applied electric fields, implying a typical behavior of capacitors. Inset presents the relation of vs , from which the slopes and trap-filled limit voltage can be obtained.
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