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Fabrication and electrical properties of (111) textured film on platinized Si substrate
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10.1063/1.2431708
/content/aip/journal/apl/90/4/10.1063/1.2431708
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2431708
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD pattern of a typical film deposited on platinized Si substrate.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM studies showing the structure of the BST films on under transmission electron microscope (TEM): (a) low magnitude bright field image; (b) and (c) show high-resolution TEM image for the interface structures of and BST/Pt(111), respectively. It is worth noting that an ultrathin layer was formed between Pt and Si. No chemical reaction or interdiffusion between different layers was observed.

Image of FIG. 3.
FIG. 3.

Dielectric constant and dielectric loss of the Pt/BST/Pt capacitor as a function of the electric field.

Image of FIG. 4.
FIG. 4.

Dielectric constant and dielectric loss of the Pt/BST/Pt capacitor as a function of frequency. Inset is a typical hysteresis loop of Pt/BST/Pt capacitor.

Image of FIG. 5.
FIG. 5.

Leakage current density of (111) textured BST film as a function of the applied electric fields, implying a typical behavior of capacitors. Inset presents the relation of vs , from which the slopes and trap-filled limit voltage can be obtained.

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/content/aip/journal/apl/90/4/10.1063/1.2431708
2007-01-23
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and electrical properties of (111) textured (Ba0.6Sr0.4)TiO3 film on platinized Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2431708
10.1063/1.2431708
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