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Ultrathin amorphous Si layer formation by femtosecond laser pulse irradiation
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10.1063/1.2431709
/content/aip/journal/apl/90/4/10.1063/1.2431709
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2431709

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of amorphous thin layer by , laser pulses.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM images of amorphous thin layer by (a) , (b) , and (c) femtosecond laser pulses.

Image of FIG. 3.
FIG. 3.

Dependence of ablation rate on laser fluence for femtosecond laser of (a) , (b) , and (c) .

Tables

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Table I.

Parameters for amorphization and solid state property of Si.

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/content/aip/journal/apl/90/4/10.1063/1.2431709
2007-01-23
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrathin amorphous Si layer formation by femtosecond laser pulse irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2431709
10.1063/1.2431709
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