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Schematic cross section of a simulated device.
Distributions of recombination rate of the studied devices (without any passivation) and (with thickness emitter ledge passivation). The biased voltages are fixed at and .
Electron densities along the cutline of the studied devices with different emitter ledge thicknesses. The biased voltages are fixed at and . The corresponding hole densities are also revealed in the inset.
Relationships between the dc current gain and emitter ledge thickness for simulated and experimental devices.
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