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Room temperature CER spectra of (a) , (b) , (c) , and wide MQWs (thin solid line) together with fitting curves (thick gray lines) and the modulus of the individual CER resonances (dashed lines).
Band lineup for GaAs–GaInNAs–GaNAs–GaAs system. The conduction band offset is defined for unstrained materials as marked in this figure, see also Ref. 20.
Method used to achieve a match of theoretical QW transition energies (solid, dashed, and dotted curves) with those found from fitting the CER spectra for the sample having QW width (horizontal dashed lines).
Theoretical calculations for and (solid curves) with experimental QW transition energies (open squares) as a function of QW width. Full squares correspond to energies of GaNAs barriers.
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