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Ground and excited state transitions in as-grown quantum wells studied by contactless electroreflectance
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10.1063/1.2432230
/content/aip/journal/apl/90/4/10.1063/1.2432230
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2432230
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature CER spectra of (a) , (b) , (c) , and wide MQWs (thin solid line) together with fitting curves (thick gray lines) and the modulus of the individual CER resonances (dashed lines).

Image of FIG. 2.
FIG. 2.

Band lineup for GaAs–GaInNAs–GaNAs–GaAs system. The conduction band offset is defined for unstrained materials as marked in this figure, see also Ref. 20.

Image of FIG. 3.
FIG. 3.

Method used to achieve a match of theoretical QW transition energies (solid, dashed, and dotted curves) with those found from fitting the CER spectra for the sample having QW width (horizontal dashed lines).

Image of FIG. 4.
FIG. 4.

Theoretical calculations for and (solid curves) with experimental QW transition energies (open squares) as a function of QW width. Full squares correspond to energies of GaNAs barriers.

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/content/aip/journal/apl/90/4/10.1063/1.2432230
2007-01-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ground and excited state transitions in as-grown Ga0.64In0.36N0.046As0.954 quantum wells studied by contactless electroreflectance
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2432230
10.1063/1.2432230
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