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(Top) Schematic diagram of the proposed device structure with bilayer. (Bottom) Band gap diagram of the bilayer device.
PL spectra of , blend, and bilayer film excited . Inset: Normalized absorbance (Abs) and the PL spectra of PVK and : (a) Abs of , (b) Abs of PVK, (c) PL of PVK, and (d) PL of .
Depth profiles of bilayers (from ACN and TCE).
Current density vs voltage and luminescence vs voltage characteristics for the EL devices of the , , and structures.
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