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Photoluminescence study of an ultrathin strained silicon on insulator layer
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10.1063/1.2432290
/content/aip/journal/apl/90/4/10.1063/1.2432290
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2432290
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

LTPL spectra of sSOI sample obtained under visible excitation .

Image of FIG. 2.
FIG. 2.

LTPL spectra of sSOI sample obtained under UV excitation .

Image of FIG. 3.
FIG. 3.

(Color online) LTPL spectra of sSOI samples: (a) as prepared (sample A) (b) without strained Si top layer (sample B), and (c) without strained Si top layer and buried oxide layer (sample C). The excitation wavelength is .

Image of FIG. 4.
FIG. 4.

and PL peak integrated intensities as a function of the laser power excitation.

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/content/aip/journal/apl/90/4/10.1063/1.2432290
2007-01-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence study of an ultrathin strained silicon on insulator layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2432290
10.1063/1.2432290
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