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Variation in CET of (a) and (b) oxide on Si and before and after PDA as a function of the Ge content in the substrate.
Ge SIMS depth profiles of a sample before and after the PDA. Inset figure shows the HfGeO profiles.
(a) O , (b) Hf , and (c) Si core level XP spectra of on Si and before and after PDA, respectively.
(a) Plot of leakage current density vs CET and (b) variation in as a function of the energy level in the Si and band gap of and .
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