1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Improvements in the electrical properties of high- dielectric films on substrates by postdeposition annealing
Rent:
Rent this article for
USD
10.1063/1.2432291
/content/aip/journal/apl/90/4/10.1063/1.2432291
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2432291
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Variation in CET of (a) and (b) oxide on Si and before and after PDA as a function of the Ge content in the substrate.

Image of FIG. 2.
FIG. 2.

Ge SIMS depth profiles of a sample before and after the PDA. Inset figure shows the HfGeO profiles.

Image of FIG. 3.
FIG. 3.

(a) O , (b) Hf , and (c) Si core level XP spectra of on Si and before and after PDA, respectively.

Image of FIG. 4.
FIG. 4.

(a) Plot of leakage current density vs CET and (b) variation in as a function of the energy level in the Si and band gap of and .

Loading

Article metrics loading...

/content/aip/journal/apl/90/4/10.1063/1.2432291
2007-01-26
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvements in the electrical properties of high-kHfO2 dielectric films on Si1−xGex substrates by postdeposition annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2432291
10.1063/1.2432291
SEARCH_EXPAND_ITEM