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In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
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10.1063/1.2432293
/content/aip/journal/apl/90/4/10.1063/1.2432293
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2432293
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Intensity of a reflected high energy electron beam (RHEED intensity) vs time measured during the evaporation of Ga onto at a substrate temperature of . The Ga fluxes are indicated.

Image of FIG. 2.
FIG. 2.

RHEED intensity transients for two different Ga fluxes as indicated in the figure. After a transition time a kink in the transients is observed. Calculating the amount of Ga absorbed (flux times ) we find that the kink indicates the adsorption of 1 ML Ga on the surface.

Image of FIG. 3.
FIG. 3.

RHEED intensity transient measured during the growth of , which started after opening the source. The RHEED intensity measured during growth yields the amount of excess Ga (indicated in the figure) on the surface. The Ga fluxes are , , and for the coverages of 1, 0.8, and 0 ML, respectively.

Image of FIG. 4.
FIG. 4.

rms roughness of layers measured by AFM scans vs Ga flux during growth. The corresponding values of the Ga coverage during growth are also included. Minimum roughness is obtained with an excess coverage of 1 ML. The line is a guide for the eyes.

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/content/aip/journal/apl/90/4/10.1063/1.2432293
2007-01-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2432293
10.1063/1.2432293
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