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Abruptness of interface revealed by carrier lifetime measurements
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Imaginary part of the pseudodielectric function for thin films deposited at different temperatures on surfaces, obtained from (ex situ) SE measurements. The deposition time for all films was . Group a shows data of samples featuring films with , whereas for group b, . For reference, data for a bare substrate are given too.

Image of FIG. 2.
FIG. 2.

(Color online) Influence of the postdeposition annealing temperature on the surface passivation quality for PECVD films deposited at different temperatures . All deposition times were , whereas annealing times were . Starting from the onset of annealing induced passivation changes, the shown lines are exponential fits of the data.

Image of FIG. 3.
FIG. 3.

(a) Calculated film thickness from ex situ SE measurements as function of , given for several deposition times . The used two-layer model is shown in the inset. Crosshatched area shows films with epitaxially grown interface. (b) Extracted activation energy as function of for the films shown in Fig. 2. Crosshatched area shows films for which the surface passivation degrades by annealing. The lines are guides for the eye.

Image of FIG. 4.
FIG. 4.

HRTEM micrograph of one of the interfaces of the sample deposited at as indicated in Fig. 3. The PECVD film was deposited on a mirror polished surface. The deposition time was .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Abruptness of a-Si:H∕c-Si interface revealed by carrier lifetime measurements