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Study of the effects of an AlN interlayer on the transport properties of heterostructures grown on SiC
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10.1063/1.2432300
/content/aip/journal/apl/90/4/10.1063/1.2432300
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2432300
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Longitudinal resistance, , as a function of . The inset is the FFT spectrum of the SdH data. A single sharp peak is present. The smaller peak to the right of the sharp peak is its harmonic.

Image of FIG. 2.
FIG. 2.

Hall resistance as a function of . The inset focuses on the high field range of the Hall resistance where quantum Hall plateaus are clearly visible. The two lowest observed filling factors are indicated: and .

Image of FIG. 3.
FIG. 3.

Dingle plot for the SdH data shown in Fig. 1 . To calculate from the slope of line fit, an effective mass of was used.

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/content/aip/journal/apl/90/4/10.1063/1.2432300
2007-01-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2432300
10.1063/1.2432300
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