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Influence of the electron beam on electromigration measurements within a scanning electron microscope
International Technology Roadmap for Semiconductors, edition 2005
9.G. Schneider, M. A. Meyer, G. Denbeaux, E. Anderson, B. Bates, A. Pearson, C. Knöchel, D. Hambach, E. A. Stach, and E. Zschech, J. Vac. Sci. Technol. B 20, 3089 (2002).
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23.In these considerations the emittance of backscattered and secondary electrons are already taken into consideration for the value of (Ref. 18).
24.The consideration made in this letter should be applicable also to in situ TEM investigations, since there are also high energy electrons injected into the samples. Furthermore, the resistance oscillations during SEM observations occur also under constant current conditions, which is not explictly shown in this letter but has been investigated experimentally.
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