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Effect of initial surface stoichiometry on bias enhanced diamond nucleation
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10.1063/1.2433033
/content/aip/journal/apl/90/4/10.1063/1.2433033
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2433033

Figures

Image of FIG. 1.
FIG. 1.

C XPS core level spectra of reconstructed (100) surfaces after BEN. (a) sample 1, (b) sample 2, (c) sample 3, and (d) sample 4 (see Table I). The components , , , and are discussed in the text.

Image of FIG. 2.
FIG. 2.

FEG-SEM pictures of diamond crystallites nucleated at the surface of Si-rich and C-terminated surfaces after BEN: (a) sample 1, (b) sample 2, (c) sample 3, and (d) sample 4. The corresponding nucleation density and surface coverage are given in Table I.

Tables

Generic image for table
Table I.

CVD parameters and XAES, XPS, and FEG-SEM results (nucleation density and surface coverage ). The XPS ratio represents the ratio of the integrated intensity of the diamond C component over the total integrated intensity of all C components.

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/content/aip/journal/apl/90/4/10.1063/1.2433033
2007-01-22
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2433033
10.1063/1.2433033
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