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Cross-sectional TEM micrograph of a GaN thin film grown with in situ network by MOCVD on sapphire.
Plan view TEM micrographs of GaN thin films grown with in situ network by MOCVD on sapphire substrates.
Normalized time-resolved PL spectra for GaN thin films grown with different in situ deposition times, control sample, and a annealed sample from Ref. 5. The solid lines are biexponential fits to the data.
XRD, TEM, and TRPL decay constants and amplitude ratios for GaN thin films with different deposition times.
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