1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Low dislocation densities and long carrier lifetimes in GaN thin films grown on a nanonetwork
Rent:
Rent this article for
USD
10.1063/1.2433754
/content/aip/journal/apl/90/4/10.1063/1.2433754
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2433754

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM micrograph of a GaN thin film grown with in situ network by MOCVD on sapphire.

Image of FIG. 2.
FIG. 2.

Plan view TEM micrographs of GaN thin films grown with in situ network by MOCVD on sapphire substrates.

Image of FIG. 3.
FIG. 3.

Normalized time-resolved PL spectra for GaN thin films grown with different in situ deposition times, control sample, and a annealed sample from Ref. 5. The solid lines are biexponential fits to the data.

Tables

Generic image for table
Table I.

XRD, TEM, and TRPL decay constants and amplitude ratios for GaN thin films with different deposition times.

Loading

Article metrics loading...

/content/aip/journal/apl/90/4/10.1063/1.2433754
2007-01-24
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2433754
10.1063/1.2433754
SEARCH_EXPAND_ITEM