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(Color online) AFM images of ZnO surfaces (a) before and (c) after thermal annealing in a box made of ceramic ZnO, and RHEED patterns of ZnO surfaces (b) before and (d) after thermal annealing. The electron beam incidence is parallel to .
(Color online) (a) RHEED pattern of an -plane GaN grown on ZnO at room temperature. The incidence of the electron beam is parallel to . The clear streaks indicate that the surface is atomically flat and the crystallinity is high. (b) The intensity profile for the RHEED specular spot during room temperature growth of GaN.
(Color online) (a) XRD scan for out-of-plane diffraction of -thick -plane GaN grown at on a RT-GaN layer. The incidence of the x ray for diffraction is parallel to . FWHM values of XRC of -plane GaN are 252 and for and , respectively. The reciprocal space mapping (RSM) around (b) and (c) .
Cross-sectional TEM image of -plane GaN substrate taken from the direction.
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