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High field-effect mobility ZnO thin-film transistors with Mg-doped gate insulator on plastic substrates
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10.1063/1.2434150
/content/aip/journal/apl/90/4/10.1063/1.2434150
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434150
/content/aip/journal/apl/90/4/10.1063/1.2434150
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/content/aip/journal/apl/90/4/10.1063/1.2434150
2007-01-23
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434150
10.1063/1.2434150
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