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High field-effect mobility ZnO thin-film transistors with Mg-doped gate insulator on plastic substrates
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10.1063/1.2434150
/content/aip/journal/apl/90/4/10.1063/1.2434150
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434150
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic cross-sectional view of ZnO-TFT structure with thick 3% Mg-doped BST gate insulator.

Image of FIG. 2.
FIG. 2.

(Color online) Capacitance per unit area–electric-field characteristics of pure BST and 3% Mg-doped BST films with the configuration of metal-insulator-metal (MIM) structure.

Image of FIG. 3.
FIG. 3.

(Color online) Current-density–electric-field characteristics of pure BST and 3% Mg-doped BST films. The inset shows a schematic structure for Mg substitution into Ti site in BST lattice.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Drain-to-source current vs drain-to-source voltage curves at various gate-to-source voltages for ZnO-TFTs with 3% Mg-doped BST gate insulators on PET substrates. [ channel length of and a channel width of .] (b) Transfer characteristics. was swept from at of .

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/content/aip/journal/apl/90/4/10.1063/1.2434150
2007-01-23
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434150
10.1063/1.2434150
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