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(Color online) Schematic cross-sectional view of ZnO-TFT structure with thick 3% Mg-doped BST gate insulator.
(Color online) Capacitance per unit area–electric-field characteristics of pure BST and 3% Mg-doped BST films with the configuration of metal-insulator-metal (MIM) structure.
(Color online) Current-density–electric-field characteristics of pure BST and 3% Mg-doped BST films. The inset shows a schematic structure for Mg substitution into Ti site in BST lattice.
(Color online) (a) Drain-to-source current vs drain-to-source voltage curves at various gate-to-source voltages for ZnO-TFTs with 3% Mg-doped BST gate insulators on PET substrates. [ channel length of and a channel width of .] (b) Transfer characteristics. was swept from at of .
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