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Anomalously anisotropic channel mobility on trench sidewalls in trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates
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10.1063/1.2434157
/content/aip/journal/apl/90/4/10.1063/1.2434157
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434157
/content/aip/journal/apl/90/4/10.1063/1.2434157
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/content/aip/journal/apl/90/4/10.1063/1.2434157
2007-01-24
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434157
10.1063/1.2434157
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