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Anomalously anisotropic channel mobility on trench sidewalls in trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates
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10.1063/1.2434157
/content/aip/journal/apl/90/4/10.1063/1.2434157
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434157

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of UMOSFET in this study. MOS channel is formed only on one side of the trench.

Image of FIG. 2.
FIG. 2.

Drain current -drain voltage characteristics at a constant gate voltage of for UMOSFETs with four different MOS channel planes.

Image of FIG. 3.
FIG. 3.

Subthreshold characteristics at for four different MOS channel planes.

Image of FIG. 4.
FIG. 4.

Field-effect channel mobility as a function of gate voltage for four different MOS channel planes.

Image of FIG. 5.
FIG. 5.

Cross-sectional illustration of trench structure showing relation between trench sidewalls and crystal planes.

Tables

Generic image for table
Table I.

Dependence of MOSFET parameters on MOS channel planes. , , , , and denote field-effect channel mobility, threshold voltage, effective fixed charge density in negative charge, subthreshold slope, and interface state density, respectively.

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/content/aip/journal/apl/90/4/10.1063/1.2434157
2007-01-24
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434157
10.1063/1.2434157
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