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Schematic cross section of UMOSFET in this study. MOS channel is formed only on one side of the trench.
Drain current -drain voltage characteristics at a constant gate voltage of for UMOSFETs with four different MOS channel planes.
Subthreshold characteristics at for four different MOS channel planes.
Field-effect channel mobility as a function of gate voltage for four different MOS channel planes.
Cross-sectional illustration of trench structure showing relation between trench sidewalls and crystal planes.
Dependence of MOSFET parameters on MOS channel planes. , , , , and denote field-effect channel mobility, threshold voltage, effective fixed charge density in negative charge, subthreshold slope, and interface state density, respectively.
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