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Theoretical and experimental investigation of valence band offsets for direct silicon bond hybrid orientation technology
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10.1063/1.2434164
/content/aip/journal/apl/90/4/10.1063/1.2434164
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434164
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Figures

Image of FIG. 1.
FIG. 1.

SIMS profiles for oxygen from two different direct bonding processes illustrate the removal of interfacial oxygen for an optimized bonding process (batch B). The peak in the C profile serves as a marker for the layer thickness. HRXTEM images in two directions—parallel and perpendicular to the notch are—shown in the insets. The lattice mismatch along the ⟨100⟩ direction of the (110) layer results in thicker transitional layer, as shown in inset (b).

Image of FIG. 2.
FIG. 2.

(Color online) Nonlinear characteristics from bulk and bonded wafers are shown for both Al and Au electrodes. Data from a coprocessed bulk Si(100) sample, which indicates Ohmic conduction and temperature dependence of the current, are illustrated in the insets.

Image of FIG. 3.
FIG. 3.

(Color online) Current-voltage simulation results from TAURUS-MEDICI with the valence band offset as a parameter illustrate a qualitative agreement with experimental data. A band offset range of depending upon specific process conditions was inferred. The inset shows a simulated zero bias band diagram of the resulting structure with a band offset of .

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/content/aip/journal/apl/90/4/10.1063/1.2434164
2007-01-23
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Theoretical and experimental investigation of valence band offsets for direct silicon bond hybrid orientation technology
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434164
10.1063/1.2434164
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