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Schematic setup for the transient lifetime measurement using a MOS structure to allow charging of the surfaces.
Instantaneous effective lifetime measured at an injection level of as a function of applied voltage.
Emitter saturation current measured at an injection level of as a function of applied voltage.
Effective surface recombination velocity as a function of application voltage, calculated from Eq. (4) (squares) and Eq. (3) (circles).
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