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Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure
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10.1063/1.2434172
/content/aip/journal/apl/90/4/10.1063/1.2434172
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434172
/content/aip/journal/apl/90/4/10.1063/1.2434172
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/content/aip/journal/apl/90/4/10.1063/1.2434172
2007-01-24
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434172
10.1063/1.2434172
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