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Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure
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10.1063/1.2434172
/content/aip/journal/apl/90/4/10.1063/1.2434172
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434172
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic setup for the transient lifetime measurement using a MOS structure to allow charging of the surfaces.

Image of FIG. 2.
FIG. 2.

Instantaneous effective lifetime measured at an injection level of as a function of applied voltage.

Image of FIG. 3.
FIG. 3.

Emitter saturation current measured at an injection level of as a function of applied voltage.

Image of FIG. 4.
FIG. 4.

Effective surface recombination velocity as a function of application voltage, calculated from Eq. (4) (squares) and Eq. (3) (circles).

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/content/aip/journal/apl/90/4/10.1063/1.2434172
2007-01-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434172
10.1063/1.2434172
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