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(a) Capacitance-voltage characteristics of a control (unstressed) MOS structure with a passivated interface and that subjected to NBT stress (, ) measured at (solid lines) and (dashed lines). (b) Capacitance-voltage characteristics of a MOS structure with a depassivated interface measured prior to NBT stress (control sample) and after NBT stress at (solid lines) and (dashed lines).
Densities of , , and centers as a function of NBT stress time measured on hydrogen-passivated and as-grown (depassivated) and interfaces.
Variation of the maximum depletion capacitance (solid circles) of a -type MOS capacitor ( annealed) as a function of NBT stress time. The corresponding fraction of passivated dopants, estimated from Eq. (3), is also shown (full squares).
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