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Insights on the physical mechanism behind negative bias temperature instabilities
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10.1063/1.2434176
/content/aip/journal/apl/90/4/10.1063/1.2434176
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434176
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Capacitance-voltage characteristics of a control (unstressed) MOS structure with a passivated interface and that subjected to NBT stress (, ) measured at (solid lines) and (dashed lines). (b) Capacitance-voltage characteristics of a MOS structure with a depassivated interface measured prior to NBT stress (control sample) and after NBT stress at (solid lines) and (dashed lines).

Image of FIG. 2.
FIG. 2.

Densities of , , and centers as a function of NBT stress time measured on hydrogen-passivated and as-grown (depassivated) and interfaces.

Image of FIG. 3.
FIG. 3.

Variation of the maximum depletion capacitance (solid circles) of a -type MOS capacitor ( annealed) as a function of NBT stress time. The corresponding fraction of passivated dopants, estimated from Eq. (3), is also shown (full squares).

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/content/aip/journal/apl/90/4/10.1063/1.2434176
2007-01-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Insights on the physical mechanism behind negative bias temperature instabilities
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434176
10.1063/1.2434176
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