1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Measurement of piezoelectric coefficient of gallium nitride using metal-insulator-semiconductor capacitors
Rent:
Rent this article for
USD
10.1063/1.2434180
/content/aip/journal/apl/90/4/10.1063/1.2434180
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434180
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cantilever bending setup. The inset shows the cantilever which consists of the stainless steel base, the sample and the ceramic top.

Image of FIG. 2.
FIG. 2.

Capacitance-voltage curves of GaN MIS capacitor at compressive strain and tensile strain and 0 strain. The flatband capacitance is shown as a dotted line to determine the change in the flatband voltage with applied strain.

Loading

Article metrics loading...

/content/aip/journal/apl/90/4/10.1063/1.2434180
2007-01-24
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement of piezoelectric coefficient of gallium nitride using metal-insulator-semiconductor capacitors
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2434180
10.1063/1.2434180
SEARCH_EXPAND_ITEM