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Evolution of optical center in Si-implanted epitaxial SiGe at low temperature annealing
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10.1063/1.2435976
/content/aip/journal/apl/90/4/10.1063/1.2435976
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2435976
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Structure of center. The dot lines indicate three parallel bonds along [111] before the bond reconstruction. (b) The schematic cross-sectional structure of the MBE SiGe and implant projected range.

Image of FIG. 2.
FIG. 2.

PL spectra of line measured at on MBE SiGe with Ge of 0.5%, 2%, 5%, and 15%, implanted with of , annealed at (a) for and (b) at for . For clarity the spectra are shifted vertically and the spectrum of the sample with Ge of 0.5% is scaled to 0.5.

Image of FIG. 3.
FIG. 3.

PL spectra of line and dislocation-related bands ( and ) of the sample with Ge of 15% as a function of exciting light wavelength (514 and ) denoted in the plot, after annealed at for .

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/content/aip/journal/apl/90/4/10.1063/1.2435976
2007-01-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2435976
10.1063/1.2435976
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