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Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy
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10.1063/1.2436636
/content/aip/journal/apl/90/4/10.1063/1.2436636
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2436636
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Morphological and crystallographic characterizations of (0001) by AFM and RHEED after ex situ hydrogen cleaning; (a) AFM scan showing atomic steps that form along the direction with a rms roughness of ; RHEED pattern showing a sharp R30° surface reconstruction pattern with electron incidence along (b) azimuth and (c) azimuth.

Image of FIG. 2.
FIG. 2.

RHEED patterns and AFM scans of MgO thin films grown on (0001) at different Mg:O flux ratios; (a) 1:99, (b) 1:49, (c) 1:30, and (d) 1:20. Left column corresponds to an incidence along the azimuth for bulk , which correlates to an incidence along the for MgO (111). Center column corresponds to an incidence along the azimuth for , which correlates to an incidence along the for MgO (111). The right column corresponds to AFM scans with rms values of 2.8, 0.23, 0.45, and for (a)–(d), respectively.

Image of FIG. 3.
FIG. 3.

XPS elemental scan of for (a) clean , (b) MgO on , and (c) MgO on after annealing at for . The consistency of the peak indicates that the MgO film is thermally stable without any diffusion at the interface.

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/content/aip/journal/apl/90/4/10.1063/1.2436636
2007-01-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2436636
10.1063/1.2436636
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