No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination
2.E. Kohn and W. Ebert, in Low-Pressure Synthetic Diamond, edited by B. Dischler (Springer, Berlin, 1998), pp. 331–359.
6.K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, and S. E. Coe, IEEE Electron Device Lett. 27, 570 (2006).
8.K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, and S. E. Coe, Diamond Relat. Mater. 15, 1954 (2006).
9.R. Anholt, Electrical and Thermal Characterization of MESFETs, HEMTs, and HBTs (Artech House, Boston, 1995), pp. 36–48.
10.M. Kubovic, A. Denisenko, W. Ebert, M. Kasu, I. Kallfass, and E. Kohn, Diamond Relat. Mater. 13, 755 (2004).
Article metrics loading...
Full text loading...
Most read this month