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Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination
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10.1063/1.2436649
/content/aip/journal/apl/90/4/10.1063/1.2436649
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2436649
/content/aip/journal/apl/90/4/10.1063/1.2436649
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/content/aip/journal/apl/90/4/10.1063/1.2436649
2007-01-25
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/4/10.1063/1.2436649
10.1063/1.2436649
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