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Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon
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10.1063/1.2431568
/content/aip/journal/apl/90/5/10.1063/1.2431568
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2431568
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Figures

Image of FIG. 1.
FIG. 1.

Dependence of the laser threshold (a) and output power at the maximum pump intensity of (b) on uniaxial stress for Si:P (black) and Si:Sb (gray) lasers. The stress was applied along the [001] and [011] directions for Si:P and Si:Sb, respectively. The inset in (a) shows the experimental setup.

Image of FIG. 2.
FIG. 2.

Emission spectra of the Si:P and Si:Sb lasers at an uniaxial stress of (a) and wave number of the line center as a function of stress (b).

Image of FIG. 3.
FIG. 3.

Dependence of the phosphor energy levels on uniaxial stress along the [001] direction relative to the lower (along the stress direction) pair of valleys. Solid lines, levels attributed to valleys; dashed lines, valleys. The notation of the states corresponds to representations of (italic) and groups.

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/content/aip/journal/apl/90/5/10.1063/1.2431568
2007-01-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2431568
10.1063/1.2431568
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