Full text loading...
XRD patterns of (a) a NbSTO film directly deposited onto Si at in a vacuum, and (b) a NbSTO film deposited at in a vacuum on the structure. The inset shows an XRD pattern of a TiN film deposited onto the Si substrate.
HRTEM micrograph from the structure prepared at in a vacuum.
Hysteretic characteristics of and structures. In the characteristic of the structure, the open and filled circles represent the low and high resistance states, respectively.
(a) Pulsed voltage duration dependence of the high and low resistance states. The resistance ratio increased as increased. (b) Switching reliability of a structure for the write/erase operations. Pulsed voltage stresses of were applied with a duration of . (c) Retention characteristics of two resistance states at room temperature. (d) Switching reproducibility of a single crystal Nb:STO wafer, structure, and polycrystalline , , and oxides.
Article metrics loading...