banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Heteroepitaxial growth of Nb-doped films on Si substrates by pulsed laser deposition for resistance memory applications
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

XRD patterns of (a) a NbSTO film directly deposited onto Si at in a vacuum, and (b) a NbSTO film deposited at in a vacuum on the structure. The inset shows an XRD pattern of a TiN film deposited onto the Si substrate.

Image of FIG. 2.
FIG. 2.

HRTEM micrograph from the structure prepared at in a vacuum.

Image of FIG. 3.
FIG. 3.

Hysteretic characteristics of and structures. In the characteristic of the structure, the open and filled circles represent the low and high resistance states, respectively.

Image of FIG. 4.
FIG. 4.

(a) Pulsed voltage duration dependence of the high and low resistance states. The resistance ratio increased as increased. (b) Switching reliability of a structure for the write/erase operations. Pulsed voltage stresses of were applied with a duration of . (c) Retention characteristics of two resistance states at room temperature. (d) Switching reproducibility of a single crystal Nb:STO wafer, structure, and polycrystalline , , and oxides.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Heteroepitaxial growth of Nb-doped SrTiO3 films on Si substrates by pulsed laser deposition for resistance memory applications