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Thermoelectric properties and a device based on and
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10.1063/1.2435605
/content/aip/journal/apl/90/5/10.1063/1.2435605
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2435605

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of electrical resistivity and Seebeck coefficient of (a) undoped -type InSb and (b) Zndoped -type InAs.

Image of FIG. 2.
FIG. 2.

Temperature dependence of power factor of and .

Image of FIG. 3.
FIG. 3.

Load characteristic of the device.

Image of FIG. 4.
FIG. 4.

Output power as a function of duty ratio (closed circles for experiment and solid lines for simulation. , ). The inset shows a proposed circuit with impedance matching and a capacitor for energy reservoir.

Tables

Generic image for table
Table I.

Maximum output powers for different duty ratios obtained by simulation and experiment under the condition that , open output voltage and are , , and , respectively. The unit of and are and , respectively.

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/content/aip/journal/apl/90/5/10.1063/1.2435605
2007-01-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermoelectric properties and a device based on n-InSb and p-InAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2435605
10.1063/1.2435605
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