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Self-organization of Pb islands on Si(111) caused by quantum size effects
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10.1063/1.2435615
/content/aip/journal/apl/90/5/10.1063/1.2435615
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2435615
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) [(a)–(f)] Diffraction intensity maps at various times (coverages) during Pb deposition on Si(111) at . (g) Diffraction intensity map within a plane parallel to the sample surface. is the exit angle in a plane normal to the specular plane.

Image of FIG. 2.
FIG. 2.

(Color online) [(a)–(c)] X-ray line scans showing the development of the satellite peak at various coverages during Pb deposition on Si(111) at substrate temperatures of 126, 170, and , respectively. [(d)–(f)] Island height distributions deduced from the measured reflectivities at the same three temperatures.

Image of FIG. 3.
FIG. 3.

(Color online) Average distance and the average diameter of Pb islands as a function of Pb coverage at . The circles are deduced from experiment, and the lines are linear fits.

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/content/aip/journal/apl/90/5/10.1063/1.2435615
2007-01-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-organization of Pb islands on Si(111) caused by quantum size effects
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2435615
10.1063/1.2435615
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