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Proximity and anomalous field-effect characteristics in double-wall carbon nanotubes
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic illustration of FEC measurement. and are source-drain bias and gate voltage, respectively. is the capacitance between the gate and the DWCNT, and is the self-capacitance of the DWCNT. is the potential applied on the tube. (b) Sketch of energy bands of the outer semiconducting shell (middle part) and the inner metallic shell (right part) near the Fermi level . is the bottom (top) of the conduction (valence) band and is the energy gap. The big arrows indicate the moving directions of under . (c) The DOS in the outer shell without and with an intershell coupling which leads to a nonzero DOS in the gap region.

Image of FIG. 2.
FIG. 2.

S-M DWCNT (a) is modeled by a two-leg ladder (b) on which a tight-binding model is defined. is the hopping coefficient in leg A (B), and is the interchain hopping coefficient.

Image of FIG. 3.
FIG. 3.

Logarithm of vs gate voltage when is used. Inset: The logarithm of vs at .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Proximity and anomalous field-effect characteristics in double-wall carbon nanotubes