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Properties of Ta–Ge–(O)N as a diffusion barrier for Cu on Si
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10.1063/1.2435979
/content/aip/journal/apl/90/5/10.1063/1.2435979
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2435979
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of as deposited and annealed at the temperature shown in figure of (a) (001) for and (b) (001) for .

Image of FIG. 2.
FIG. 2.

AES depth profile of (001) for (a) as deposited and (b) annealed at for .

Image of FIG. 3.
FIG. 3.

AES depth profile of (001) for (a) as-deposited and (b) annealed at for .

Image of FIG. 4.
FIG. 4.

Sheet resistance of Cu vs annealing temperature for Ta(O)N and Ta–Ge–(O)N.

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/content/aip/journal/apl/90/5/10.1063/1.2435979
2007-02-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of Ta–Ge–(O)N as a diffusion barrier for Cu on Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2435979
10.1063/1.2435979
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