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Temperature dependence of the resistance of FeSi films deposited at on -type silicon substrate of resistivity, (a) , (b) , (c) , and (d) greater than . vs for the discontinuous film shown in the inset is indicated by the arrow.
Temperature dependence of the resistance for CoSi and TiSi films on -type silicon substrates with native layers, and FeSi films on thermally grown thick layers. Substrate resistivity is .
Temperature dependence of zero-field resistance and magnetoresistance for a magnetic field applied parallel and perpendicular to the FeSi film.
Field dependence of magnetoresistance of a FeSi film before, at the onset, and after the transition. Field was applied parallel to the film. The inset shows vs on a log-log scale. The solid line corresponds to .
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