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Anomalous conductivity and positive magnetoresistance in structures in the vicinity of a resistive transition
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10.1063/1.2436634
/content/aip/journal/apl/90/5/10.1063/1.2436634
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2436634
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the resistance of FeSi films deposited at on -type silicon substrate of resistivity, (a) , (b) , (c) , and (d) greater than . vs for the discontinuous film shown in the inset is indicated by the arrow.

Image of FIG. 2.
FIG. 2.

Temperature dependence of the resistance for CoSi and TiSi films on -type silicon substrates with native layers, and FeSi films on thermally grown thick layers. Substrate resistivity is .

Image of FIG. 3.
FIG. 3.

Temperature dependence of zero-field resistance and magnetoresistance for a magnetic field applied parallel and perpendicular to the FeSi film.

Image of FIG. 4.
FIG. 4.

Field dependence of magnetoresistance of a FeSi film before, at the onset, and after the transition. Field was applied parallel to the film. The inset shows vs on a log-log scale. The solid line corresponds to .

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/content/aip/journal/apl/90/5/10.1063/1.2436634
2007-01-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalous conductivity and positive magnetoresistance in FeSi–SiO2–Si structures in the vicinity of a resistive transition
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2436634
10.1063/1.2436634
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