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Magnetic and transport properties of homogeneous ferromagnetic semiconductor with high Mn concentration
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10.1063/1.2436710
/content/aip/journal/apl/90/5/10.1063/1.2436710
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2436710
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High resolution TEM image of a film observed in cross-section view. The inset is a selected area electron diffraction pattern.

Image of FIG. 2.
FIG. 2.

(a) Typical hysteresis loop of the as-deposited film measured at and (b) temperature dependence of the magnetization measured at magnetic field.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependence of the resistivity of film, (b) magnetic field dependence of the Hall resistivity measured at , and (c) temperature dependence of the Hall resistivity measured at magnetic field. For Hall measurements in (b) and (c), Hall resistivity at field was obtained by to deduct the component of resistivity due to the nonperfect symmetry of the experimental van der Pauw configuration.

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/content/aip/journal/apl/90/5/10.1063/1.2436710
2007-02-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetic and transport properties of homogeneous MnxGe1−x ferromagnetic semiconductor with high Mn concentration
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/5/10.1063/1.2436710
10.1063/1.2436710
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